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PD-94079
IRF7807VD2
FETKYTM MOSFET / SCHOTTKY DIODE
* Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode * Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output * Low Conduction Losses * Low Switching Losses * Low Vf Schottky Rectifier Description The FETKYTM family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain CurrentQ Power DissipationS Schottky and Body Diode Average ForwardCurrentT 25C 70C 25C 70C TJ, TSTG IF (AV) 25C 70C IDM PD Symbol VDS VGS ID Max. 30 20 8.3 6.6 66 2.5 1.6 3.7 2.3 -55 to 150 C W A A Units V
A/S A/S A/S G
1 8
K/D K/D K/D K/D D
2
7
3
6
4
5
SO-8
Top View
DEVICE CHARACTERISTICSU IRF7807VD2 RDS(on) QG Qsw Qoss 17m 9.5nC 3.4nC 12nC
Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-AmbientS Maximum Junction-to-Lead
RJA RJL
Max. 50 20
Units C/W C/W
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03/05/01
IRF7807VD2
Electrical Characteristics
Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS 1.0 50 6.0 IGSS QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf
(off)
Min 30
Typ - 17
Max - 25
Units V m V A mA nA
Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7.0AR VDS = VGS ,ID = 250A VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100C VGS = 20V VGS =4.5V, ID=7.0A VDS = 16V
Current*
Gate-Source Leakage Current* Total Gate Charge* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Chg(Qgs2 + Qgd) Output Charge* Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
100 9.5 2.3 1.0 2.4 3.4 12 2.0 6.3 1.2 11 2.2 5.2 16.8 14
nC
VDS = 16V, VGS = 0 VDD = 16V, ID = 7.0A ns VGS = 5V, RG= 2 Resistive Load
Schottky Diode & Body Diode Ratings and Characteristics Parameter Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min VSD trr Qrr ton 36 41 Typ Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3.0A, VGS =0VR Tj = 125C, Is = 3.0A, VGS =0VR ns Tj = 25C, Is = 7.0A, VDS = 16V nC di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Q Repetitive rating; pulse width limited by max. junction temperature. R Pulse width 400 s; duty cycle 2%. S When mounted on 1 inch square copper board T 50% Duty Cycle, Rectangular UTypical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 7.0A. * Device are 100% tested to these parameters.
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IRF7807VD2
Power MOSFET Selection for DC/DC Converters
Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. Power losses in the control switch Q1 are given by;
4
Drain Current
1
Gate Voltage t2 VGTH t0 t1 t3
QGS1
QGS2
2
QGD
Drain Voltage
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
This can be expanded and approximated by;
Ploss = (Irms 2 x Rds(on ) ) Q Q + I x gd x Vin x f + I x gs2 x Vin x f ig ig + (Qg x Vg x f ) + Qoss x Vin x f 2
Figure 1: Typical MOSFET switching waveform
Synchronous FET The power loss equation for Q2 is approximated by;
* Ploss = Pconduction + P + Poutput drive
Ploss = Irms x Rds(on)
This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 1. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached (t1) and the time the drain current rises to Idmax (t2) at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure 2 shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitance's Cds and Cdg when multiplied by the power supply input buss voltage.
Q + ( g x Vg x f )
(
2
)
Q + oss x Vin x f + (Qrr x Vin x f ) 2
*dissipated primarily in Q1.
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IRF7807VD2
For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs' susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn Typical Mobile PC Application The performance of these new devices has been tested in circuit and correlates well with performance predictions generated by the system models. An advantage of this new technology platform is that the MOSFETs it produces are suitable for both control FET and synchronous FET applications. This has been demonstrated with the 3.3V and 5V converters. (Fig 3 and Fig 4). In these applications the same MOSFET IRF7807V was used for both the control FET (Q1) and the synchronous FET (Q2). This provides a highly effective cost/performance solution. the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on. Spice model for IRF7807V can be downloaded in machine readable format at www.irf.com.
Figure 2: Qoss Characteristic
3.3V Supply : Q1=Q2= IRF7807V
93 92 91 Efficiency (%) Efficiency (%) 90 89 88 87 86 85 84 83 1 2 3 Load current (A) 4 5
Vin=24V
5.0V Supply : Q1=Q2= IRF7807V
95 94 93 92 91 90 89 88 Vin=24V Vin=14V Vin=10V
Vin=14V Vin=10V
87 86 1 2 3 Load current (A) 4 5
Figure 3
Figure 4
4
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IRF7807VD2
RDS(on) , Drain-to -Source On Resistance ( )
2.0
ID = 7.0A
0.030
R DS(on) , Drain-to-Source On Resistance (Normalized)
1.5
0.025
1.0
0.020
ID = 7.0A
0.015
0.5
0.0 -60 -40 -20
VGS = 4.5V
0 20 40 60 80 100 120 140 160
0.010 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
TJ , Junction Temperature ( C)
VGS, Gate -to -Source Voltage (V)
Fig 5. Normalized On-Resistance Vs. Temperature
Fig 7. On-Resistance Vs. Gate Voltage
70 60 VGS TOP 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V
70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 VGS 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP
IS, Source-to-Drain Current (A)
50 40 30 20 10 0
0.0 V 380s PULSE WIDTH Tj = 25C
IS, Source-to-Drain Current (A)
O.OV 380S PULSE WIDTH Tj = 150C
VSD, Source-to-Drain Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Reverse Output Characteristics
Fig 8. Typical Reverse Output Characteristics
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IRF7807VD2
100
Thermal Response (Z thJA )
D = 0.50 0.20 0.10 0.05 0.02 1 0.01
10
SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 1
PDM t1 t2 10
t1 , Rectangular Pulse Duration (sec)
Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
ID = 7.0A
VGS , Gate-to-Source Voltage (V)
4
VDS = 16V
3
2
1
0 0 2 4 6 8 10 12
QG , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
6
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IRF7807VD2
MOSFET , Body Diode & Schottky Diode Characteristics
100
100
Tj = 150C
Reverse Current - I R ( mA )
10
125C
1
100C 75C
Tj = 125C Tj = 25C
Instantaneous Forward Current - I F ( A )
0.1
50C
10
0.01
25C
0.001 0 5 10 15 20 25 30
Reverse Voltage - V R (V)
1
Fig. 12 - Typical Values of Reverse Current Vs. Reverse Voltage
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage Drop - V SD ( V )
Fig. 11 - Typical Forward Voltage Drop Characteristics
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IRF7807VD2
SO-8 Package Details
D -B -
D IM
5
IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157
M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99
A
6 5 H 0.2 5 (.0 10 ) M AM
5
8 E -A -
7
A1 B C D E e e1 H K
0 .10 (.00 4) L 8X 6 C 8X
1
2
3
4
e 6X
e1 A
K x 45
.050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8
1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8
-CB 8X 0 .25 (.01 0) N O TE S : A1 M CASBS
L
R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N T RO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U T LIN E CO N F O RM S T O JED E C O U T LINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O T R US IO N S M O LD P R O TR U SIO NS N O T T O EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS T H E LE N G TH O F L EA D F O R SO L DE R IN G TO A SU B ST RA T E.. 1.27 ( .0 50 ) 3X 6 .46 ( .25 5 )
1 .78 (.07 0) 8X
SO-8 Part Marking
8
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IRF7807VD2
SO-8 Tape and Reel
T E R M IN A L N UM B E R 1
1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 )
8 .1 ( .31 8 ) 7 .9 ( .31 2 )
F E E D D IRE C T IO N
NOTES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
3 30 .00 ( 12 .9 9 2 ) M A X.
1 4.4 0 ( .5 6 6 ) 1 2.4 0 ( .4 8 8 ) N O TES : 1 . CO N T R O L L IN G DIM E N S IO N : M IL L IME T E R . 2 . O UT L IN E C O N F O R M S T O E IA -4 8 1 & E IA -54 1 .
This product has been designed and qualified for the commercial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/01
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